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| PD -50057E GA300TD60U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Features * Generation 4 IGBT technology * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ultra- soft recovery * Industry standard package * UL approved Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.80V @VGE = 15V, IC = 300A Benefits * Increased operating efficiency * Direct mounting to heatsink * Performance optimized for power conversion: UPS, SMPS, Welding * Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25C ICM ILM IFM VGE VISOL PD @ TC = 25C PD @ TC = 85C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current* Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 600 300 600 600 600 20 2500 880 460 -40 to +150 -40 to +125 Units V A V W C Thermal / Mechanical Characteristics Parameter RJC RJC RCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal 1, 2 & 3S Weight of Module Typ. -- -- 0.1 -- -- 400 Max. 0.14 0.20 -- 6.0 5.0 -- Units C/W N. m g www.irf.com 1 05/14/02 GA300TD60U Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 600 -- -- VGE = 0V, IC = 1mA -- 1.8 2.3 VGE = 15V, IC = 300A -- 1.9 -- V VGE = 15V, IC = 300A, TJ = 125C Gate Threshold Voltage 3.0 -- 6.0 IC = 1.75mA Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, IC = 1.75mA Forward Transconductance -- 269 -- S VCE = 25V, I C = 300A Collector-to-Emitter Leaking Current -- -- 1.0 mA VGE = 0V, VCE = 600V -- -- 10 VGE = 0V, VCE = 600V, TJ = 125C Diode Forward Voltage - Maximum -- 3.3 -- V IF = 300A, VGE = 0V -- 3.2 -- IF = 300A, VGE = 0V, TJ = 125C Gate-to-Emitter Leakage Current -- -- 400 nA VGE = 20V Dynamic Characteristics - TJ = 125C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 1249 173 423 645 282 418 220 22 25 47 27755 1735 361 200 128 12771 1691 Max. Units Conditions 1873 VCC = 400V 260 nC IC = 187A 635 TJ = 25C -- RG1 = 27, RG2 = 0, -- ns IC = 300A -- VCC = 360V -- VGE = 15V -- mJ See Fig.17 through Fig.19 -- 60 -- VGE = 0V -- pF VCC = 30V -- = 1 MHz -- ns IC = 300A -- A RG1 = 27 -- nC RG2 = 0 -- A/s VCC = 360V di/dt =1300A/s 2 www.irf.com GA300TD60U 200 For both: 160 LOAD CURRENT (A) D uty cy cle: 50% TJ = 125C T s ink = 90C G ate drive as specified P ow e r Dis sip ation = 150 W 120 S q u a re w a v e : 60 % of ra ted vo ltag e 80 I 40 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) T = 125 C J TJ = 125 C 100 100 TJ = 25 C TJ = 25 C 10 0.5 V = 15V 80s PULSE WIDTH GE 1.0 1.5 2.0 2.5 3.0 10 5.0 V = 25V 80s PULSE WIDTH CE 6.0 7.0 8.0 9.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA300TD60U 400 3.0 VCE , Collector-to-Emitter Voltage(V) V = 15V 80 us PULSE WIDTH GE Maximum DC Collector Current(A) IC = 600 A 300 200 2.0 IC = 300 A IC = 150 A 100 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Th e rm a l Im p e d a n ce - Z th J C 0.1 D = 0.5 0 0 .2 0 0 .1 0 0.0 5 0 .0 2 0.0 1 0.001 Notes: 1. Duty factor D = t 1 /t P DM t1 t2 S in g le P u ls e (Th e r m a l R e sista n c e ) 0.01 0.1 1 2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.0001 10 100 1000 t 1 , R e cta n g u la r Pu lse D u ra tio n (S e co n ds ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA300TD60U 50000 VGE , Gate-to-Emitter Voltage (V) 40000 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 187A 16 C, Capacitance (pF) Cies 30000 12 20000 8 C oes 10000 C res 4 0 1 10 100 0 0 200 400 600 800 1000 1200 1400 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 70 Total Switching Losses (mJ) 60 Total Switching Losses (mJ) VCC = 360V VGE = 15V 125C TJ = 125 C I C = 300A 1000 RG1=27;R G2 = 0 G = Ohm VGE = 15V VCC = 360V 50 100 IC = 600 A IC = 300 A IC = 150 A 40 30 0 10 20 30 40 50 RRG ,, Gate Resistance ( (Ohm) G Gate Resistance ) 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA300TD60U 120 IC , Collector-to-Emitter Current ( A ) Total Switching Losses (mJ) RG =27;RG2 = 0 G1 = Ohm T J = 125 C VCC = 360V 100 VGE = 15V 80 800 V G E = 20V T J = 125C VCE measured at terminal (Peak Voltage) 600 SAFE OPERATING AREA 400 60 40 200 20 0 0 100 200 300 400 500 600 0 0 200 400 600 A 800 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter V oltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig. 12 - Reverse Bias SOA 25000 I F = 6 00 A In s ta n ta n e o u s F o rwa rd C u rre n t - I F (A ) 20000 I F = 30 0A I F = 15 0A TJ = 125C TJ = 25C 100 - (nC ) Q RR 15000 10000 5000 10 1.0 2.0 3.0 4.0 5.0 VR = 36 0 V TJ = 12 5 C TJ = 25 C 0 500 1000 1500 2000 F o rwa rd V o lta g e D ro p - V FM (V ) d i f /dt - (A /s) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA300TD60U 300 250 VR = 36 0 V TJ = 12 5 C TJ = 25 C I F = 60 0A I F = 3 00 A I F = 15 0 A 200 I F = 60 0A I F = 30 0A I F = 1 5 0A 250 I IR R M - (A ) t rr - (ns) 150 200 100 150 50 100 500 VR = 3 6 0 V T J = 1 2 5 C TJ = 2 5 C 1000 1500 2000 0 500 1000 1500 2000 d i f /d t - (A / s) d i f /d t - (A / s ) Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt www.irf.com 7 GA300TD60U 90% Vge +Vge Vce Ic 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = Vce Ic dt t1 + 5 S V c e ic d t t1 Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 E re c = t4 V d idIc t dt Vd d t3 t1 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com GA300TD60U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 17e. Macro Waveforms for Figure 17a's Test Circuit L 1000V 50V 6000 F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 18. Clamped Inductive Load Test Circuit Figure 19. Pulsed Collector Current Test Circuit www.irf.com 9 GA300TD60U Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. R See fig. 17 S For screws M6. T Pulse width 80s; single shot. Case Outline -- DUAL INT-A-PAK 107.30 106.30 3X M6 8 [.314] MAX. 4.185] [4.224 93.30 3.673 92.70 [3.650] 28.60 2X 27.40 1.079] [1.126 4X 6.60 5.40 11 10 48.30 47.70 6 7 1 2 3 5 4 2X 15.59 14.39 .567] [.614 4X FAS T ON TAB (110) 2.8 x 0.5 [.110 x .020] 48.50 47.50 1.870] [1.909 8.00 6.60 .260] [.315 31.00 29.60 5.50 4.50 1.165] [1.220 .213] [.260 NOT ES: 1. ALL DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 2. CONT ROLLING DIMENS ION: MILLIMETER. [ 1.902 1.878] 8 9 6.80 4X O 6.20 [ .267 .244] [ .217 .177] 24.00 23.00 .906] [.945 2.303] [2.343 62.70 2.468 61.70 [2.429] 59.50 58.50 0.15 [.0059] CONVEX 104.50 103.50 4.075] [4.114 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 10 www.irf.com |
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